| PART |
Description |
Maker |
| RFSP2010 PRFS-P2010-006 P2010-DSH_E PRFS-P2010-005 |
The RFS P2010 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 2.4-2.5 GHz frequency ...
2.4-2.5 GHz Power Amplifier
From old datasheet system
2.4?2.5 GHz Power Amplifier
Single-band power amplifiers
2.42.5 GHz Power Amplifier 2400 MHz - 2500 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
|
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
ANADIGICS Inc
ANADIGICS, Inc.
|
| RFSP5022 PRFS-P5022-EVL PRFS-P5022-009 PRFS-P5022- |
5.15-5.85 GHz U-NII Power Amplifier 5.15-5.85千兆赫的U - NII功率放大
5.15-5.85 GHz U-NII Power Amplifier 5150 MHz - 5850 MHz RF/MICROWAVE NARROW BAND MEDIUM POWER AMPLIFIER
Single-band power amplifiers
The RFS P5022 power amplifier is a high-performance GaAs HBT IC designed for use in a transmit applications in the 5.15-5.85 GHz ...
|
ANADIGICS, Inc.
ANADIGICS[ANADIGICS, Inc]
ANADIGICS[ANADIGICS Inc]
|
| PE9304_06 9304-00 9304-01 9304-11 PE9304 PE930406 |
1- 7 GHz Low Power CMOS Divide-by-2 Prescaler
1 GHz - 7 GHz Low Power UltraCMOS Divide-by-2 Prescaler Rad-hard for Space Applications
|
Peregrine Semiconductor Cor...
PEREGRINE[Peregrine Semiconductor Corp.]
Peregrine Semiconductor...
|
| ATF-46171 |
2-10 GHz Medium Power Gallium Arsenide FET(2-10 GHz 中等功率砷化FET)
|
HP[Agilent(Hewlett-Packard)]
Agilent (Hewlett-Packard)
|
| AWT6283RM49P8 |
3.3 GHz to 3.8 GHz Mobile WiMAX Power Amplifier Module
|
ANADIGICS, Inc
|
| AGR18030EF |
30 W, 1.805 GHz-1.880 GHz, LDMOS RF Power Transistor
|
TriQuint Semiconductor
|
| PE6806 PE6806-16 |
2 Watts Low Power WR-90 Waveguide Load 8.2 GHz to 12.4 GHz
|
Pasternack Enterprises,...
|
| PE6800 PE6800-16 |
0.5 Watts Low Power WR-28 Waveguide Load 26.5 GHz to 40 GHz
|
Pasternack Enterprises,...
|
| CPT-13-6036 |
Temperature Compensated Power Amplifier 6 GHz - 13 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| CPT-8-2027 CPT-8-2025 CPT-8-2026 |
Temperature Compensated Power Amplifier 2 GHz - 8 GHz
|
TELEDYNE[Teledyne Technologies Incorporated]
|
| TIM1414-8-252 |
HIGH POWER P1dB=39.0 dBm at 13.75 GHz to 14.5 GHz
|
Toshiba Semiconductor
|
